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    Phase modulation of MoO2 -MoO3 nanostructured thin films through W-Doping; utilizing UV photodetection and gas sensing applications
    (Selçuk Üniversitesi, 2022) Zaki, Shrouk E.; Buyukharman, Mustafa; Basyooni, Mohamed A.; Görmez, Arife Efe; Sezgin, Ayşegül; Eker, Yasin Ramazan; Yılmaz, Mücahit
    Gas sensing properties of metal oxide semiconductors draw high attention due to their simple fabricating methods, and low cost, chemical, and physical properties. In general, a high bandgap (>2 eV) can cause them to react in the UV region through the electromagnetic spectrum. Controlling the UV-photodetection and gas sensing ability of MoO2-MoO3 thin film through tungsten (W) doping of different ratios have been reported here. The preparation of these films was grown using a reactive magnetron sputtering system with different power sputtering of W-content. The bandgap calculations showed that the samples have a wide bandgap value. A small particle size of 8nm was observed through high W doping concentration which enhanced these materials toward high efficient gas sensing and UV photodetector applications. The UV optical sensor exhibits a high responsivity value of 2500A/W and an external quantum efficiency (EQE) value of 5x109 at 365nm. Also, an increase in the photocurrent gain value with increasing the W amount with a maximum value of 0.13, while a photocurrent of 1mA was observed. On the other hand, a fast-response/recovery time-based CO2 gas sensor of less than 10 sec was observed. The thin-film sensors showed well-defined adsorption and desorption kinetics in a CO2 environment with a p-type chemisorption behavior.
  • Küçük Resim
    Öğe
    Phase Modulation of MoO2-MoO3 Nanostructured Thin Films Through W-Doping; Utilizing UV Photodetection and Gas Sensing Applications
    (Selçuk Üniversitesi Fen Fakültesi, 2022) Zaki, Shrouk E.; Büyükharman, Mustafa; Görmez, Arife Efe; Sezgin, Ayşegül; Eker, Yasin Ramazan; Yılmaz, Mücahit
    Gas sensing properties of metal oxide semiconductors draw high attention due to their simple fabricating methods, and low cost, chemical, and physical properties. In general, a high bandgap (>2 eV) can cause them to react in the UV region through the electromagnetic spectrum. Controlling the UV-photodetection and gas sensing ability of MoO2-MoO3 thin film through tungsten (W) doping of different ratios have been reported here. The preparation of these films was grown using a reactive magnetron sputtering system with different power sputtering of W-content. The bandgap calculations showed that the samples have a wide bandgap value. A small particle size of 8nm was observed through high W doping concentration which enhanced these materials toward high efficient gas sensing and UV photodetector applications. The UV optical sensor exhibits a high responsivity value of 2500A/W and an external quantum efficiency (EQE) value of 5x109 at 365nm. Also, an increase in the photocurrent gain value with increasing the W amount with a maximum value of 0.13, while a photocurrent of 1mA was observed. On the other hand, a fast-response/recovery time-based CO2 gas sensor of less than 10 sec was observed. The thin-film sensors showed well-defined adsorption and desorption kinetics in a CO2 environment with a p-type chemisorption behavior.