High frequency characteristics of tin oxide thin films on Si

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dc.contributor.authorYueksel, Oe. Faruk
dc.contributor.authorOcak, S. B.
dc.contributor.authorSelcuk, A. B.
dc.date.accessioned2020-03-26T17:27:00Z
dc.date.available2020-03-26T17:27:00Z
dc.date.issued2008
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractHigh frequency characteristics of tin oxide (SnO2) thin films were studied. SnO2 thin films have been successfully grown on n-type Si (111) substrates by using a spray deposition technique. The capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristics of the metal-oxide-semiconductor (Au/SnO2/n-Si) Schottky diodes were investigated in the high frequency range from 300 kHz to 5 MHz. It has been shown that the interface state density, D-it, ranges from 2.44 x 10(13) cm(-2) eV(-1) at 300 kHz to 0.57 x 10(13) cm(-2) eV(-1) at 5 MHz and exponentially decreases with increasing frequency. The C-V and G/omega-V characteristics confirm that the interface state density and series resistance of the diode are important parameters that strongly influence the electrical parameters exhibited by the metaloxide-semiconductor structure. (C) 2008 Elsevier Ltd. All rights reserved.en_US
dc.identifier.doi10.1016/j.vacuum.2008.02.002en_US
dc.identifier.endpage1186en_US
dc.identifier.issn0042-207Xen_US
dc.identifier.issue11en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1183en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.vacuum.2008.02.002
dc.identifier.urihttps://hdl.handle.net/20.500.12395/22441
dc.identifier.volume82en_US
dc.identifier.wosWOS:000257632400007en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherPERGAMON-ELSEVIER SCIENCE LTDen_US
dc.relation.ispartofVACUUMen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectMOS diodesen_US
dc.subjectSnO2en_US
dc.subjectseries resistanceen_US
dc.subjectinterface state densityen_US
dc.titleHigh frequency characteristics of tin oxide thin films on Sien_US
dc.typeArticleen_US

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