The electrical characteristics of ITO/CZTS/ZnO/Al and ITO/ZnO/CZTS/Al heterojunction diodes

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dc.contributor.authorGezgin, Serap Yiğit.
dc.contributor.authorKılıç, Hamdi Şükür.
dc.date.accessioned2020-03-26T20:19:28Z
dc.date.available2020-03-26T20:19:28Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, ITO/a-CZTS/ZnO1/Al, ITO/ZnO2/a-CZTS/Al and ITO/ZnO2/c-CZTS/Al diode structures were produced by PLD technique and analysed, as well as data are presented. a-CZTS and ZnO thin films were grown as layer by layer thin films on ITO coated glass at room temperature and annealing process was not carried out for these samples. Morphologies and crystal structures of ZnO and a-CZTS thin films were analysed. ZnO thin films have been produced depending on an oxygen ambient gas pressure and a-CZTS thin film has been produced using low laser energies. While ZnO thin films exhibit crystal structure, a-CZTS has amorphous structure. In addition, c-CZTS thin film has also been annealed at 375 degrees C sulfurization temperature at which crystalline structure was obtained. Optical features of thin films were determined by UV-vis spectra and it was observed that a-CZTS and c-CZTS thin films have a high band gap and an ideal band gap, respectively. Diode structure of ITO/a-CZTS/ZnO1/Al has shown normal diode characteristics in dark environment and has different ideality factors for three regions in semi-logarithmic forward bias region. ITO/ZnO2/a-CZTS/Al diode structure has also shown a negative differential resistance and behaved like a tunnelling diode in dark environment exhibiting photoelectric effect under illuminated environment. Short circuit current density is very low, fill factor and open circuit voltage are quite high. In addition, ITO/ZnO2/c-CZTS/Al diode structure has shown some photo-electricity property under illumination conditions. The diode's short circuit current density was found to be higher and open circuit voltage was very low. Electrical characteristics of diodes have been described in some details in this work.en_US
dc.description.sponsorshipScientific and Technical Research Council of Turkey (TUBITAK)Turkiye Bilimsel ve Teknolojik Arastirma Kurumu (TUBITAK) [16498031503748]; Selcuk UniversitySelcuk University [15301020, 18401178]en_US
dc.description.sponsorshipAuthors kindly would like to thank,Scientific and Technical Research Council of Turkey (TUBITAK) for financial support via Grant No. 16498031503748, Selcuk University, High Technology Research and Application Centre for supplying with Infrastructure and budget via 15301020 and 18401178 projects.en_US
dc.identifier.citationGezgin, S. Y., Kılıç, H. Ş. (2019). The Electrical Characteristics of ITO/CZTS/ZnO/Al and ITO/ZnO/CZTS/Al Heterojunction Diodes. Optik, 182, 356-371.
dc.identifier.doi10.1016/j.ijleo.2019.01.014en_US
dc.identifier.endpage371en_US
dc.identifier.issn0030-4026en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage356en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.ijleo.2019.01.014
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38283
dc.identifier.volume182en_US
dc.identifier.wosWOS:000474672600048en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorGezgin, Serap Yiğit.
dc.institutionauthorKılıç, Hamdi Şükür.
dc.language.isoenen_US
dc.publisherELSEVIER GMBHen_US
dc.relation.ispartofOPTIKen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectThin filmen_US
dc.subjectCZTSen_US
dc.subjectZnOen_US
dc.subjectDiodeen_US
dc.subjectPLDen_US
dc.subjectPhotoelectricen_US
dc.titleThe electrical characteristics of ITO/CZTS/ZnO/Al and ITO/ZnO/CZTS/Al heterojunction diodesen_US
dc.typeArticleen_US

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