Temperature dependence of current-voltage characteristics of Al/p-Si (100) Schottky barrier diodes

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dc.contributor.authorYuksel, O. Faruk
dc.date.accessioned2020-03-26T17:40:26Z
dc.date.available2020-03-26T17:40:26Z
dc.date.issued2009
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe current-voltage (I-V) characteristics on Al/p-Si (100) Schottky barrier diodes in the temperature range 100-300K were carried out. We have tried to determine some intrinsic and contact properties such as barrier heights, ideality factor, series resistance, and carrier concentrations. The apparent barrier height and the ideality factor calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluation of forward I-V data reveals a decrease in the zero-bias barrier height (Phi(B0)), but an increase in the ideality factor (n) with decrease in temperature. From the reverse-bias I-V graphs, it is found that the experimental carrier density (N(A)) values have increased with increasing temperature. (C) 2009 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipBAP office of Seluk UniversitySelcuk Universityen_US
dc.description.sponsorshipThis work is partially supported by the BAP office of Seluk University.en_US
dc.identifier.doi10.1016/j.physb.2009.03.026en_US
dc.identifier.endpage1997en_US
dc.identifier.issn0921-4526en_US
dc.identifier.issue14-15en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage1993en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.physb.2009.03.026
dc.identifier.urihttps://hdl.handle.net/20.500.12395/23904
dc.identifier.volume404en_US
dc.identifier.wosWOS:000267408000026en_US
dc.identifier.wosqualityQ3en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofPHYSICA B-CONDENSED MATTERen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectMetal-semiconductor contacten_US
dc.subjectSchottky barrier diodeen_US
dc.subjectI-V characteristicsen_US
dc.subjectIdeality factoren_US
dc.subjectBarrier heighten_US
dc.titleTemperature dependence of current-voltage characteristics of Al/p-Si (100) Schottky barrier diodesen_US
dc.typeArticleen_US

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