Identifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/?-V-T characteristics in frequency ranged 50 kHz to 5 MHz

Basit Öğe Kaydı
dc.authorid0000-0002-2765-4165
dc.contributor.authorÇiçek, Osman.
dc.contributor.authorDurmuş, Haziret.
dc.contributor.authorAltındal, Şemsettin.
dc.date.accessioned2020-03-26T20:20:18Z
dc.date.available2020-03-26T20:20:18Z
dc.date.issued2020
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractIn this study, Re/n-GaAs with a native oxide layer based on metal-semiconductor (MS) structures were produced and then, the capacitance-voltage-temperature (C-V-T) and the conductance-voltage-temperature (G/-V-T) data of them were obtained in the frequency ranged 50 kHz to 5 MHz. Using the raw data, the electronic parameters was calculated by the developed LabVIEW-based program. Methodologically, the series resistance (R-s) values were calculated from the measured capacitance (C-m) and conductivity (G(m)) values, while the interface state (N-ss) values were obtained from using the combined high (C-HF)-low (C-LF) frequency capacitance method by Nicollian and Brews. Experimentally, the C values increased with a decreasing frequency, while decreased with increasing temperatures in the depletion and accumulation regions. On the other hand, G/ values decreased with increasing frequency in forward and reverse bias regions. It can be attributed that, the C and the G/ values are quite affected by the presence of the R-s and the N-ss in the forbidden energy gap and a native oxide layer between M and S. The R-s-V-T curves have especially peaks in accumulation and depletion regions at low frequency values, whereas these peaks decreased at high frequencies. In addition, the N-ss-V-T curves give peaks in the range of - 0.1 V to 0.7 V at variable temperatures and the N-ss values decrease with increasing temperature and shift towards negative bias regions. Experimental results indicate that the R-s and N-ss are important parameters and so, these parameters must be considered in sensor applications based on Re/n-GaAs structures.en_US
dc.identifier.citationÇiçek, O., Durmuş, H., Altındal, Ş. (2020). Identifying of Series Resistance and Interface States on Rhenium/n-GaAs Structures Using C–V–T and G/ω–V–T Characteristics in Frequency Ranged 50 kHz to 5 MHz. Journal of Materials Science: Materials in Electronics, 31(1), 704–713.
dc.identifier.doi10.1007/s10854-019-02578-1en_US
dc.identifier.endpage713en_US
dc.identifier.issn0957-4522en_US
dc.identifier.issn1573-482Xen_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage704en_US
dc.identifier.urihttps://dx.doi.org/10.1007/s10854-019-02578-1
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38554
dc.identifier.volume31en_US
dc.identifier.wosWOS:000497851000007en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorDurmuş, Haziret.
dc.language.isoenen_US
dc.publisherSPRINGERen_US
dc.relation.ispartofJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectcapacitance–voltage–temperature
dc.subjectconductance–voltage–temperature
dc.subjectG/ω-V-T
dc.subjectC-V-T
dc.subjectrhenium/n-GaAs
dc.subjectinterface states
dc.subjectresistance
dc.titleIdentifying of series resistance and interface states on rhenium/n-GaAs structures using C-V-T and G/?-V-T characteristics in frequency ranged 50 kHz to 5 MHzen_US
dc.typeArticleen_US

Dosyalar

Orijinal paket
Listeleniyor 1 - 1 / 1
Küçük Resim
İsim:
Osman ÇİÇEK.pdf
Boyut:
3.17 MB
Biçim:
Adobe Portable Document Format
Açıklama:
Full Text Access
İndir

Koleksiyon

WoS İndeksli Yayınlar Koleksiyonu
Fizik/Makale Koleksiyonu
Scopus İndeksli Yayınlar Koleksiyonu