Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity

In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current-voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (FB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The FB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm(2), respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm(2), respectively. Additionally, the series resistance (R-s) values from modified Norde method and interface state density (N-ss) values using current-voltage measurements have been determined. The values of R-s have been found to be 1924 and 5094 Omega at dark and 100 mW/cm(2), respectively. The values of N-ss have been found to be 4.76 x 10(12) and 3.15 x 10(12) eV(-1) cm(-2) at dark and 100 mW/cm(2), respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.