Intensity and temperature dependence of photocurrent of a-Si : H Schottky diodes

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dc.contributor.authorSahin, M
dc.contributor.authorKaplan, R
dc.date.accessioned2020-03-26T17:03:45Z
dc.date.available2020-03-26T17:03:45Z
dc.date.issued2006
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractThe photocurrent of hydrogenated amorphous silicon (a-Si:H) Schottky diode has been studied as a function of light intensity from a HeNe laser, applied electric bias, and temperature, by using a constant photocurrent method. The I-V characteristics and thus fill factor (FF) values were also obtained over the temperature range 173-297 K. The FF increases very little as the temperature is decreased. The exponent in the power relationship I-ph similar to G(gamma) between photocurrent and light intensity was found to be temperature and electric field dependent, and peaked around 260 K measured. The activation energy obtained from thermally activated photocurrent was also found to be electric field dependent. These experimental results are discussed by means of the influence of the trapping of charge carriers on the electric field profile. (c) 2005 Elsevier B.V. All rights reserved.en_US
dc.identifier.doi10.1016/j.cap.2005.03.002en_US
dc.identifier.endpage118en_US
dc.identifier.issn1567-1739en_US
dc.identifier.issn1878-1675en_US
dc.identifier.issue1en_US
dc.identifier.scopusqualityQ2en_US
dc.identifier.startpage114en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.cap.2005.03.002
dc.identifier.urihttps://hdl.handle.net/20.500.12395/20548
dc.identifier.volume6en_US
dc.identifier.wosWOS:000233420600020en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.relation.ispartofCURRENT APPLIED PHYSICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjecta-Si : H Schottky diodeen_US
dc.subjectintensity- and temperature-dependenceen_US
dc.subjectrecombinationen_US
dc.subjectelectric field profileen_US
dc.titleIntensity and temperature dependence of photocurrent of a-Si : H Schottky diodesen_US
dc.typeArticleen_US

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