The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature

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dc.authorid0000-0003-1668-7866
dc.contributor.authorDurmuş, Haziret.
dc.contributor.authorKarataş, Şükrü.
dc.date.accessioned2020-03-26T20:19:21Z
dc.date.available2020-03-26T20:19:21Z
dc.date.issued2019
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractThe main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (I-o), ideality factors (n), barrier heights (?(bo)), rectification ratio (RR) and series resistances (R-S) were obtained from I-V and C-V measurements using different calculation methods. At low voltages (V0.3V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V>0.3V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (N-SS) as a function of energy distribution (E-SS- E-V) was obtained from the I-Vdata by taking into account the bias dependence of the effective barrier height (phi(b)) for the Re/n-type Si Schottky barrier diodes.en_US
dc.identifier.citationDurmuş, H., Karataş, Ş. (2019). The analysis of the Electrical Characteristics and Interface State Densities of Re/n-type Si Schottky Barrier Diodes at Room Temperature. International Journal of Electronics, 106(4), 507-520.
dc.identifier.doi10.1080/00207217.2018.1545145en_US
dc.identifier.endpage520en_US
dc.identifier.issn0020-7217en_US
dc.identifier.issn1362-3060en_US
dc.identifier.issue4en_US
dc.identifier.scopusqualityQ3en_US
dc.identifier.startpage507en_US
dc.identifier.urihttps://dx.doi.org/10.1080/00207217.2018.1545145
dc.identifier.urihttps://hdl.handle.net/20.500.12395/38225
dc.identifier.volume106en_US
dc.identifier.wosWOS:000457604600002en_US
dc.identifier.wosqualityQ4en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.institutionauthorDurmuş, Haziret.
dc.language.isoenen_US
dc.publisherTAYLOR & FRANCIS LTDen_US
dc.relation.ispartofINTERNATIONAL JOURNAL OF ELECTRONICSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectElectrical parametersen_US
dc.subjectinterface statesen_US
dc.subjectseries resistanceen_US
dc.subjectrectification ratioen_US
dc.subjectsurface potentialen_US
dc.titleThe analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperatureen_US
dc.typeArticleen_US

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