A multifunctional ınterlayer for solution processed high performance ındium oxide transistors

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dc.contributor.authorKyndiah, Adrica
dc.contributor.authorAblat, Abduleziz
dc.contributor.authorGuyot-Reeb, Seymour
dc.contributor.authorSchultz, Thorsten
dc.contributor.authorZu, Fengshuo
dc.contributor.authorKoch, Norbert
dc.contributor.authorAmsalem, Patrick
dc.contributor.authorChiodini, Stefano
dc.contributor.authorAlıç, Tuğbahan Yılmaz
dc.contributor.authorTopal, Yasemin
dc.contributor.authorKuş, Mahmut
dc.contributor.authorHirsch, Lionel
dc.contributor.authorFasquel, Sophie
dc.contributor.authorAbbas, Mamatimin
dc.date.accessioned2020-03-26T19:52:42Z
dc.date.available2020-03-26T19:52:42Z
dc.date.issued2018
dc.departmentSelçuk Üniversitesi, Fen Fakültesi, Fizik Bölümüen_US
dc.description.abstractMultiple functionality of tungsten polyoxometalate (POM) has been achieved applying it as interfacial layer for solution processed high performance In2O3 thin film transistors, which results in overall improvement of device performance. This approach not only reduces off-current of the device by more than two orders of magnitude, but also leads to a threshold voltage reduction, as well as significantly enhances the mobility through facilitated charge injection from the electrode to the active layer. Such a mechanism has been elucidated through morphological and spectroscopic studies.en_US
dc.description.sponsorshipAquitaine regional grant "SMOLED" [2014-1R60306]; DFGGerman Research Foundation (DFG) [SFB951, AM 419/1-1]; China Scholarship Council (CSC)China Scholarship Council; ANR as part of the "Investissements d'avenir" programFrench National Research Agency (ANR) [ANR-10-EQPX-28-01/Equipex ELORPrintTec]en_US
dc.description.sponsorshipThe project is supported by Aquitaine regional grant "SMOLED" (2014-1R60306). The work in Berlin was supported by the DFG (SFB951 and AM 419/1-1). A. Ablat thanks the financial support of China Scholarship Council (CSC). Authors are thankful to the ANR as part of the "Investissements d'avenir" program (reference: ANR-10-EQPX-28-01/Equipex ELORPrintTec) and technical support of Dr. Roland Lefevre in XPS measurement.en_US
dc.identifier.citationKyndiah, A., Ablat, A., Guyot-Reeb, S., Schultz, T., Zu, F., Koch, N., Amsalem, P., Chiodini, S., Alic, T. Y., Topal, Y., Kus, M., Hirsch, L., Fasquel, S., Abbas, M. (2018). A Multifunctional Interlayer for Solution Processed High Performance Indium Oxide Transistors. Scıentıfıc Reports, 8, 1-7.
dc.identifier.doi10.1038/s41598-018-29220-0en_US
dc.identifier.endpage7
dc.identifier.issn2045-2322en_US
dc.identifier.pmid30026501en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage1
dc.identifier.urihttps://dx.doi.org/10.1038/s41598-018-29220-0
dc.identifier.urihttps://hdl.handle.net/20.500.12395/36248
dc.identifier.volume8en_US
dc.identifier.wosWOS:000439102400002en_US
dc.identifier.wosqualityQ1en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.indekslendigikaynakPubMeden_US
dc.institutionauthorAlıç, Tuğbahan Yılmaz
dc.language.isoenen_US
dc.publisherNATURE PUBLISHING GROUPen_US
dc.relation.ispartofSCIENTIFIC REPORTSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.selcuk20240510_oaigen_US
dc.titleA multifunctional ınterlayer for solution processed high performance ındium oxide transistorsen_US
dc.typeArticleen_US

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