Analysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodes

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dc.contributor.authorTugluoglu, N.
dc.contributor.authorCaliskan, F.
dc.contributor.authorYuksel, O. F.
dc.date.accessioned2020-03-26T19:00:48Z
dc.date.available2020-03-26T19:00:48Z
dc.date.issued2015
dc.departmentSelçuk Üniversitesien_US
dc.description.abstractIn this paper, 5,6,11,12-tetraphenylnaphthacene (rubrene) was prepared on n type GaAs (100) substrate by spin coating. The device parameters of Al/rubrene/n-GaAs (100) Schottky diode have been investigated by means of current-voltage (I-V) characteristics in the temperature range 100-300 K by steps of 50 K and capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics at 1 MHz and 300 K. It was observed that ideality factors increased and barrier heights decreased with the decreasing temperature. The observed anomaly of temperature dependence of Schottky barrier height and ideality factor are explained by Gaussian distribution of Schottky barrier height in the same temperature ranges. Al/rubrene/n-GaAs Schottky barrier diode has been shown to have a Gaussian distribution with mean barrier height ((Phi) over bar (B)) of 1.076 eV and standard deviation (sigma(s)) of 0.119 V. Schottky barrier height (Phi(B)), series resistance (R-s), and the density of interface trap states (N-s s) of the diode were calculated as 1.004 eV, 1.18 k Omega and 2.145 x 10(11) eV(-1) cm(-2) for 1 MHz, respectively. (C) 2014 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipSelcuk University BAP officeSelcuk University [13201056]en_US
dc.description.sponsorshipThis work is supported by Selcuk University BAP office with the research Project number 13201056. This work is a part of the M.Sc. thesis of F.C.en_US
dc.identifier.doi10.1016/j.synthmet.2014.10.027en_US
dc.identifier.endpage275en_US
dc.identifier.issn0379-6779en_US
dc.identifier.scopusqualityQ1en_US
dc.identifier.startpage270en_US
dc.identifier.urihttps://dx.doi.org/10.1016/j.synthmet.2014.10.027
dc.identifier.urihttps://hdl.handle.net/20.500.12395/31837
dc.identifier.volume199en_US
dc.identifier.wosWOS:000348954000038en_US
dc.identifier.wosqualityQ2en_US
dc.indekslendigikaynakWeb of Scienceen_US
dc.indekslendigikaynakScopusen_US
dc.language.isoenen_US
dc.publisherELSEVIER SCIENCE SAen_US
dc.relation.ispartofSYNTHETIC METALSen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.selcuk20240510_oaigen_US
dc.subjectRubrene thin filmen_US
dc.subjectSpin coatingen_US
dc.subjectGaussian distributionen_US
dc.subjectMean barrier heighten_US
dc.subjectInterface state densityen_US
dc.titleAnalysis of inhomogeneous barrier and capacitance parameters for Al/rubrene/n-GaAs (100) Schottky diodesen_US
dc.typeArticleen_US

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